PART |
Description |
Maker |
NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
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ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
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MX23L12810-1 MX23L12810RC-10 MX23L12810RC-12 MX23L |
CAP TANT LOWESR 33UF 25V 20% SMD 8M X 16 MASK PROM, 120 ns, PDSO48 NEW 128M-BIT (16M x 8 / 8M x 16) MASK ROM FOR TSOP PACKAGE
|
Macronix International Co., Ltd. PROM MCNIX[Macronix International]
|
TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32 SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28 RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28 Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp. Intersil Corporation
|
HY57V28820HCLT-I |
16Mx8|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 16Mx8 | 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
TE Connectivity, Ltd.
|
PUMA67F16006A-80E PUMA67F16006A-12E PUMA67F16006AI |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 120NS, SOIC, IND TEMP(EEPROM) 70NS, PDIP, IND TEMP(EEPROM) 120NS, TSOP, COM TEMP(EEPROM) 200NS, PLCC, COM TEMP(EEPROM) DIE(EEPROM) 90NS, PGA, 883C; LEVEL B FULLY COMPLIANT(EEPROM) 120NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM) 120NS, PLCC, IND TEMP(EEPROM) X32号,闪存EEPROM模块 x32 Flash EEPROM Module X32号,闪存EEPROM模块
|
Lattice Semiconductor, Corp. Amphenol, Corp.
|
BR93H56RFVM-2CE2 BR93H56RFVM-2CTR BR93H56RF-2CTR B |
Serial EEPROM Series Automotive EEPROM 125 Operation Microwire BUS EEPROM
|
Rohm
|
BR25H020F-2C BR25H020FJ-2C BR25H020FVT-2C |
Serial EEPROM Series Automotive EEPROM 125?Operation SPI BUS EEPROM
|
Rohm
|
BR93H66-2C BR93H66RFVM-2CTR BR93H66RFVM-2CE2 BR93H |
Serial EEPROM Series Automotive EEPROM 125 Operation Microwire BUS EEPROM
|
Rohm
|
BR25H010-2C |
Serial EEPROM Series Automotive EEPROM 125 Operation SPI BUS EEPROM
|
Rohm
|
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